Style fixes.
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@ -103,12 +103,12 @@
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* pin), the SDRAM requires a 100µs delay prior to issuing any command
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* other than a COMMAND INHIBIT or NOP.
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*
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* "Starting at some point during this 100µs period and continuing at least
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* through the end of this period, COMMAND INHIBIT or NOP commands should
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* be applied. Once the 100µs delay has been satisfied with at least one
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* COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command
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* should be applied. All banks must then be precharged, thereby placing
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* the device in the all banks idle state.
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* "Starting at some point during this 100µs period and continuing at
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* least through the end of this period, COMMAND INHIBIT or NOP commands
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* should be applied. Once the 100µs delay has been satisfied with at
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* least one COMMAND INHIBIT or NOP command having been applied, a
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* PRECHARGE command should be applied. All banks must then be precharged,
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* thereby placing the device in the all banks idle state.
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*
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* "Once in the idle state, two AUTO REFRESH cycles must be performed.
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* After the AUTO REFRESH cycles are complete, the SDRAM is ready for mode
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@ -103,12 +103,12 @@
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* pin), the SDRAM requires a 100µs delay prior to issuing any command
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* other than a COMMAND INHIBIT or NOP.
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*
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* "Starting at some point during this 100µs period and continuing at least
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* through the end of this period, COMMAND INHIBIT or NOP commands should
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* be applied. Once the 100µs delay has been satisfied with at least one
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* COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command
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* should be applied. All banks must then be precharged, thereby placing
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* the device in the all banks idle state.
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* "Starting at some point during this 100µs period and continuing at
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* least through the end of this period, COMMAND INHIBIT or NOP commands
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* should be applied. Once the 100µs delay has been satisfied with at
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* least one COMMAND INHIBIT or NOP command having been applied, a
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* PRECHARGE command should be applied. All banks must then be precharged,
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* thereby placing the device in the all banks idle state.
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*
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* "Once in the idle state, two AUTO REFRESH cycles must be performed.
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* After the AUTO REFRESH cycles are complete, the SDRAM is ready for
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@ -166,8 +166,8 @@ void weak_function sam_netinitialize(void)
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* (MICREL KSZ9021/31) operating at 10/100/1000 Mbps.
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* The board supports RGMII interface mode.
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* The Ethernet interface consists of 4 pairs of low voltage differential
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* pair signals designated from GRX± and GTx± plus control signals for link
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* activity indicators. These signals can be used to connect to a
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* pair signals designated from GRX± and GTx± plus control signals for
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* link activity indicators. These signals can be used to connect to a
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* 10/100/1000 BaseT RJ45 connector integrated on the main board.
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*
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* The KSZ9021/31 interrupt is available on PB35 INT_GETH0
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@ -137,8 +137,8 @@ static inline void sam_sdram_delay(unsigned int loops)
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* Per the SAMA5D3-Xplained User guide:
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* "Two DDR2/SDRAM (MT47H64M16HR) used as main system memory (256 MByte).
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* The board includes 2 Gbits of on-board soldered DDR2 (double data rate)
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* SDRAM. The footprints can also host two DDR2(MT47H128M16RT) from Micron®
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* for a total of 512 MBytes of DDR2 memory.
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* SDRAM. The footprints can also host two DDR2(MT47H128M16RT) from
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* Micron® for a total of 512 MBytes of DDR2 memory.
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* The memory bus is 32 bits wide and operates with a frequency of up
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* to 166 MHz."
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*
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@ -166,8 +166,8 @@ void weak_function sam_netinitialize(void)
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* (MICREL KSZ9021/31) operating at 10/100/1000 Mbps.
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* The board supports RGMII interface mode.
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* The Ethernet interface consists of 4 pairs of low voltage differential
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* pair signals designated from GRX± and GTx± plus control signals for link
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* activity indicators. These signals can be used to connect to a
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* pair signals designated from GRX± and GTx± plus control signals for
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* link activity indicators. These signals can be used to connect to a
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* 10/100/1000 BaseT RJ45 connector integrated on the main board.
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*
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* The KSZ9021/31 interrupt is available on PB35 INT_GETH0
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