Pull request for mtd/progmem refactoring.
* mtd/progmem: change up_progmem_npages to up_progmem_neraseblocks
page is a unit for read/write operation.
eraseblock is a unit for erase operation.
up_progmem_npages is a little bit confusing because it returns number of
erase blocks in flash memory. This patch changes up_progmem_npages to
up_progmem_neraseblocks. There is no logical change.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: up_progmem_erasesize.
Change argument name to be more readable.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: up_progmem_eraseblock
Change up_progmem_erasepage to up_progmem_eraseblock.
eraseblock is more readable name than erasepage.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: change up_progmem_eraseblock's return value.
up_progmem_eraseblock erase a block. so it's better to return the erase block
size than page size.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* arm/cortex-r : fix wrong cp15_flash_dcache.
change mcrne to mcr for unconditional dcache.
Signed-off-by: sungduk.cho <sungduk.cho@samsung.com>
Approved-by: GregoryN <gnutt@nuttx.org>
progmem_read/write() is incorrectly calculating the target address,
expecting the offset argument is given in a block number. This is
completely wrong and as a result invalid flash region is accessed.
Byte-oriented read/write interfaces of mtd device accept the
target address in a byte offset, not a block number.
Signed-off-by: Heesub Shin <heesub.shin@samsung.com>
