since sometime platform code need do some special action during memcpy
Signed-off-by: Xiang Xiao <xiaoxiang@xiaomi.com>
Change-Id: Id108ef4232376feab3e37e9b3aee9a7927a03bd4
and remove the reference of CONFIG_ARCH_HAVE_PROGMEM from code
Signed-off-by: Xiang Xiao <xiaoxiang@xiaomi.com>
Change-Id: I89a73f138d54718ee8bc9345958675d7a2a34ba8
If size_t != uint32_t, this can give a build error:
mtd/mtd_progmem.c:134:16: error: conflicting types for 'progmem_log2'
134 | static int32_t progmem_log2(uint32_t blocksize)
| ^~~~~~~~~~~~
mtd/mtd_progmem.c:82:16: note: previous declaration of 'progmem_log2' was here
82 | static int32_t progmem_log2(size_t blocksize);
| ^~~~~~~~~~~~
Makefile:118: recipe for target 'mtd_progmem.o' failed
Signed-off-by: Juha Niskanen <juha.niskanen@haltian.com>
Pull request for mtd/progmem refactoring.
* mtd/progmem: change up_progmem_npages to up_progmem_neraseblocks
page is a unit for read/write operation.
eraseblock is a unit for erase operation.
up_progmem_npages is a little bit confusing because it returns number of
erase blocks in flash memory. This patch changes up_progmem_npages to
up_progmem_neraseblocks. There is no logical change.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: up_progmem_erasesize.
Change argument name to be more readable.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: up_progmem_eraseblock
Change up_progmem_erasepage to up_progmem_eraseblock.
eraseblock is more readable name than erasepage.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* mtd/progmem: change up_progmem_eraseblock's return value.
up_progmem_eraseblock erase a block. so it's better to return the erase block
size than page size.
Signed-off-by: EunBong Song <eunb.song@samsung.com>
* arm/cortex-r : fix wrong cp15_flash_dcache.
change mcrne to mcr for unconditional dcache.
Signed-off-by: sungduk.cho <sungduk.cho@samsung.com>
Approved-by: GregoryN <gnutt@nuttx.org>
progmem_read/write() is incorrectly calculating the target address,
expecting the offset argument is given in a block number. This is
completely wrong and as a result invalid flash region is accessed.
Byte-oriented read/write interfaces of mtd device accept the
target address in a byte offset, not a block number.
Signed-off-by: Heesub Shin <heesub.shin@samsung.com>
