# # For a description of the syntax of this configuration file, # see misc/tools/kconfig-language.txt. # comment "MTD Configuration" config MTD_PARTITION bool "Support MTD partitions" default n ---help--- MTD partitions are build as MTD drivers that manage a sub-region of the FLASH memory. The contain the original FLASH MTD driver and simply manage all accesses to assure that (1) FLASH accesses are always offset to the beginning of the partition, and (2) that FLASH accesses do not extend outside of the partition. A FLASH device may be broken up into several partitions managed, each managed by a separate MTD driver. The MTD parition interface is described in: include/nuttx/mtd/mtd.h FAR struct mtd_dev_s *mtd_partition(FAR struct mtd_dev_s *mtd, off_t offset, off_t nblocks); Each call to mtd_partition() will create a new MTD driver instance managing the sub-region of flash beginning at 'offset' (in blocks) and of size 'nblocks' on the device specified by 'mtd'. config FTL_WRITEBUFFER bool "Enable write buffering in the FTL layer" default n depends on DRVR_WRITEBUFFER config FTL_READAHEAD bool "Enable read-ahead buffering in the FTL layer" default n depends on DRVR_READAHEAD config MTD_SECT512 bool "512B sector conversion" default n ---help--- If enabled, a MTD driver will be created that will convert the sector size of any other MTD driver to a 512 byte "apparent" sector size. The managed MTD driver in this case must have an erase block size that is greater than 512B and an event multiple of 512B. if MTD_SECT512 config MTD_SECT512_ERASED_STATE hex "Erased state of the FLASH" default 0xff config MTD_SECT512_READONLY bool "512B read-only" default n endif # MTD_SECT512 config MTD_PARTITION_NAMES bool "Support MTD partition naming" depends on FS_PROCFS depends on MTD_PARTITION default n ---help--- MTD partitions can be assigned a name for reporting via the procfs file system interface. This adds an API which must be called to specify the partition name. config MTD_BYTE_WRITE bool "Byte write" default n ---help--- Some devices (such as the EON EN25F80) support writing an arbitrary number of bytes to FLASH. This setting enables MTD interfaces to support such writes. The SMART file system can take advantage of this option if it is enabled. config MTD_WRBUFFER bool "Enable MTD write buffering" default n depends on DRVR_WRITEBUFFER select DRVR_INVALIDATE select DRVR_READBYTES ---help--- Build the mtd_rwbuffer layer and enable support for write buffering. if MTD_WRBUFFER config MTD_NWRBLOCKS int "MTD write buffer size" default 4 ---help--- The size of the MTD write buffer (in blocks) endif # MTD_WRBUFFER config MTD_READAHEAD bool "Enable MTD read-ahead buffering" default n depends on DRVR_READAHEAD select DRVR_INVALIDATE select DRVR_READBYTES ---help--- Build the mtd_rwbuffer layer and enable support for read-ahead buffering. if MTD_READAHEAD config MTD_NRDBLOCKS int "MTD read-head buffer size" default 4 ---help--- The size of the MTD read-ahead buffer (in blocks) endif # MTD_READAHEAD config MTD_CONFIG bool "Enable Dev Config (MTD based) device" default n ---help--- Provides a /dev/config device for saving / restoring application configuration data to a standard MTD device or partition. if MTD_CONFIG config MTD_CONFIG_RAM_CONSOLIDATE bool "Always use RAM consolidation method (work in progress)" default n ---help--- When the MTD device used for /dev/config contains more than one erase block, the "unused entry" consolidation reserves one erase block by default for cleanup purposes. This consumes the minimum amount of RAM, however it "wastes" one erase block on the device. (For configurations that have only a single erase block assigned to the config device, RAM consolidation is the ONLY option.) Another apporach is to allow the driver to use the entire MTD device (or partition) to save config data, and then allocate a RAM buffer (the size of one erase block) to perform the consolidation. Enabling this feature basically trades off RAM usage for FLASH usage. If the MTD device used for config data has small erase sizes (4K, etc.) and there is plenty of free RAM available, then this is probably a good option. Another benefit of this option is it reduces code space a bit since the "reserved block" consolidate routine is not needed. config MTD_CONFIG_ERASEDVALUE hex "Erased value of bytes on the MTD device" default 0xff ---help--- Specifies the value of the erased state of the MTD FLASH. For most FLASH parts, this is 0xff, but could also be zero depending on the device. endif # MTD_CONFIG comment "MTD Device Drivers" menuconfig MTD_NAND bool "MTD NAND support" default n ---help--- Enable support for NAND FLASH devices. if MTD_NAND config MTD_NAND_MAXNUMBLOCKS int "Max blocks" default 1024 ---help--- Maximum number of blocks in a device config MTD_NAND_MAXNUMPAGESPERBLOCK int "Max pages per block" default 256 ---help--- Maximum number of pages in one block config MTD_NAND_MAXPAGEDATASIZE int "Max page size" default 4096 ---help--- Maximum size of the data area of one page, in bytes. config MTD_NAND_MAXPAGESPARESIZE int "Max size of spare area" default 256 ---help--- Maximum size of the spare area of one page, in bytes. config MTD_NAND_MAXSPAREECCBYTES int "Max number of ECC bytes" default 48 ---help--- Maximum number of ECC bytes stored in the spare for one single page. config MTD_NAND_BLOCKCHECK bool "Block check" default y ---help--- Enable support for ECC and bad block checking. config MTD_NAND_SWECC bool "Sofware ECC support" default n if ARCH_NAND_HWECC default y if !ARCH_NAND_HWECC ---help--- Build in logic to support software calculation of ECC. config MTD_NAND_HWECC bool "Hardware ECC support" default n depends on ARCH_NAND_HWECC ---help--- Build in logic to support hardware calculation of ECC. config MTD_NAND_MAXSPAREEXTRABYTES int "Max extra free bytes" default 206 ---help--- Maximum number of extra free bytes inside the spare area of a page. config MTD_NAND_EMBEDDEDECC bool "Support devices with Embedded ECC" default n ---help--- Some NAND devices have internal, embedded ECC function. One (the only one supported) is Micron, 4-bit ECC, device size = 1Gb or 2Gb or 4Gb. endif # MTD_NAND config RAMMTD bool "RAM-based MTD driver" default n ---help--- Build support for a RAM-based MTD driver. if RAMMTD config RAMMTD_BLOCKSIZE int "RAM MTD block size" default 512 config RAMMTD_ERASESIZE int "RAM MTD erase block size" default 4096 config RAMMTD_ERASESTATE hex "Simulated erase state" default 0xff config RAMMTD_FLASHSIM bool "RAM MTD FLASH Simulation" default n ---help--- RAMMTD_FLASHSIM will add some extra logic to improve the level of FLASH simulation. endif config MTD_AT24XX bool "I2C-based AT24xx eeprom" default n select I2C ---help--- Build support for I2C-based AT24CXX EEPROM(at24c32, at24c64, at24c128, at24c256) if MTD_AT24XX config AT24XX_SIZE int "AT24xx size (kbit)" default 64 ---help--- This is the XX in the AT24Cxx part number. For example, if you have a AT 24C512, then the correct value is 512. This value is also the capacity of the part in kilobits. For example, the 24C512 supports 512 Kbits or 512 /8 = 64 KiB. config AT24XX_ADDR hex "AT24XX I2C address" default 0x50 range 0x50 0x57 endif config MTD_AT25 bool "SPI-based AT25 FLASH" default n select SPI if MTD_AT25 config AT25_SPIMODE int "AT25 SPI Mode" default 0 config AT25_SPIFREQUENCY int "AT25 SPI Frequency" default 20000000 endif config MTD_AT45DB bool "SPI-based AT45DB flash" default n select SPI if MTD_AT45DB config AT45DB_FREQUENCY int "AT45DB frequency" default 1000000 config AT45DB_PREWAIT bool "Enable higher performance write logic" default y config AT45DB_PWRSAVE bool "Enable power save" default n endif config MTD_M25P bool "SPI-based M25P FLASH" default n select SPI if MTD_M25P config M25P_SPIMODE int "M25P SPI mode" default 0 config M25P_MANUFACTURER hex "M25P manufacturers ID" default 0x20 ---help--- Various manufacturers may have produced the parts. 0x20 is the manufacturer ID for the STMicro MP25x serial FLASH. If, for example, you are using the a Macronix International MX25 serial FLASH, the correct manufacturer ID would be 0xc2. config M25P_MEMORY_TYPE hex "M25P memory type ID" default 0x20 ---help--- The memory type for M25 "P" series is 0x20, but the driver also supports "F" series devices, such as the EON EN25F80 part which adds a 4K sector erase capability. The memory type for "F" series parts from EON is 0x31. The 4K sector erase size will automatically be enabled when filesytems that can use it are enabled, such as SMART. config M25P_SUBSECTOR_ERASE bool "Sub-Sector Erase" default n ---help--- Some devices (such as the EON EN25F80) support a smaller erase block size (4K vs 64K). This option enables support for sub-sector erase. The SMART file system can take advantage of this option if it is enabled. endif config MTD_SMART bool "Sector Mapped Allocation for Really Tiny (SMART) Flash support" default n ---help--- The MP25x series of Flash devices are typically very small and have a very large erase block size. This causes issues with the standard Flash Translation Layer block driver since it tries to allocate a RAM block the size of a flash erase block, which is typically 64K. This block driver uses a different approach to sacrifice performance for RAM memory footprint by saving data in sectors (typically 2K - 4K based on memory size) and relocating sectors as needed when an erase block needs to be erased. if MTD_SMART config MTD_SMART_SECTOR_SIZE int "SMART Device sector size" default 1024 ---help--- Sets the size of a single allocation on the SMART device. Larger sector sizes reduce overhead per sector, but cause more wasted space with a lot of smaller files. config MTD_SMART_WRITEBUFFER bool "Enable SMART write buffering" default n depends on DRVR_WRITEBUFFER config MTD_SMART_READAHEAD bool "Enable SMART read-ahead buffering" default n depends on DRVR_READAHEAD config MTD_SMART_WEAR_LEVEL bool "Support FLASH wear leveling" depends on MTD_SMART default y ---help--- Adds extra logic and RAM to guarantee equal wear leveling of the FLASH device by recording and monitoring erase block operations and selecting sector allocations to ensure all erase blocks are worn evenly. This will evenly wear both dynamic and static data on the device. if MTD_SMART_WEAR_LEVEL && !SMART_CRC_16 config MTD_SMART_CONVERT_WEAR_FORMAT bool "Convert existing non wear leveling FLASH to wear leveling" default n ---help--- Adds a little extra code which detects an existing SMART format on a device that was created prior to the wear leveling implementation. This conversion only works if either no CRC is being used or if CRC-8 is being used as other CRC versions use a different header format and require a mksmartfs on the device even if an existing format is there. endif config MTD_SMART_ENABLE_CRC bool "Enable Sector CRC error detection" depends on MTD_SMART default n ---help--- Enables logic to compute and validate a CRC for logical sectors. The CRC is calculated for all bytes in the logical sector. The CRC size is selectable (8-bit, 16-bit, 32-bit). For added protection, larger CRCs should be used with larger (2K - 4K) sector sizes. Enabling CRC protection will cause increased sector relocation and increased erase block erasures since directory and wear-level status updates can no longer be performed in-place and mandate re-writing the information to a new sector. An 8-bit CRC protection scheme can be added to an existing non-CRC formatted SMART volume without needing to reformat the drive. As sectors are re-written or relocated, they will be converted to CRC protected sectors. choice prompt "CRC level selection" depends on MTD_SMART_ENABLE_CRC default SMART_CRC_8 ---help--- Select the level of CRC protection implemented in the SMART MTD layer. Smaller CRC selection uses less overhead per logical sectors, but also has a higher probability of not detecting multiple bit errors. Devices with larger logical sector sizes should use a larger CRC. config SMART_CRC_8 bool "CRC-8" config SMART_CRC_16 bool "CRC-16" endchoice config MTD_SMART_MINIMIZE_RAM bool "Minimize SMART RAM usage using logical sector cache" depends on MTD_SMART default 0 ---help--- Reduces RAM usage in the SMART MTD layer by replacing the 1-for-1 logical to physical sector map with a smaller cache-based structure. This can save a considerable amount of RAM on devices with a large sector count, but at the expense of increased read/write times when a cache miss occurs. If the requested logical sector has not been cached, then the device will need to be scanned to located it on the physical medium. config MTD_SMART_SECTOR_CACHE_SIZE int "Number of entries in the SMART logical sector cache" depends on MTD_SMART_MINIMIZE_RAM default 512 ---help--- Sets the size of the cache used for logical to physical sector mapping. A larger number allows larger files to be "seek"ed randomly without encountering cache misses. Any files larger than CACH_SIZE * SECTOR_SIZE that are seeked start to end will cause the cache to flush forcing manual scanning of the MTD device to find the logical to physical mappings. config MTD_SMART_SECTOR_PACK_COUNTS bool "Pack free and release counts when possible" depends on MTD_SMART_MINIMIZE_RAM default y ---help--- For volumes with 16 sectors per erase block or less, this option causes the free sector and released sector counts used for allocation and garbage collection to be packed such that two values are stored per byte. For volumes with 16 sectors per erase block, the 4 LSBs are packed and all of the high-order bits are packed separately (8 per byte). This squeezes even more RAM out. config MTD_SMART_SECTOR_ERASE_DEBUG bool "Track Erase Block erasure counts" depends on MTD_SMART default n ---help--- Allocates an Erase Block erase count array and keeps track of the number of erases per erase block. This data is then presented on the procfs interface. config MTD_SMART_ALLOC_DEBUG bool "RAM Allocation Debug" depends on MTD_SMART default n ---help--- Records all SMART MTD layer allocations for debug purposes and makes them accessible from the ProcFS interface if it is enabled. endif # MTD_SMART config MTD_RAMTRON bool "SPI-based RAMTRON NVRAM Devices FM25V10" default n select SPI ---help--- SPI-based RAMTRON NVRAM Devices FM25V10 if MTD_RAMTRON config RAMTRON_WRITEWAIT bool "Wait after write" default n ---help--- Wait after performing a RAMTRON write operation to assure that the write completed error-free. The default behavior is to wait for the previous write to complete BEFORE starting the next write. This option, if selected, forces the driver to wait for the write to complete AFTER each write. This is a tradoeff: Selecting this option will significantly reduce RAMTRON performance but has the advantage that it will correctly associate a write failure with a specific write operation. One RAMTRON read operations, this option also enables some additional status checking to check for device failures during the read. config RAMTRON_SETSPEED bool "Adjustable bus speed" default n ---help--- Select an option to provide an ioctl, MTDIOC_SETSPEED call that supports dynamic selection of the RAMTRON bus speed. endif config MTD_SST25 bool "SPI-based SST25 FLASH" default n select SPI if MTD_SST25 config SST25_SPIMODE int "SST25 SPI Mode" default 0 config SST25_SPIFREQUENCY int "SST25 SPI Frequency" default 20000000 config SST25_READONLY bool "SST25 Read-Only FLASH" default n config SST25_SECTOR512 bool "Simulate 512 byte Erase Blocks" default n config SST25_SLOWWRITE bool default n ---help--- There used to be a bug in the current code when using the higher speed AAI write sequence. The nature of the bug is that the WRDI instruction is not working. At the end of the AAI sequence, the status register continues to report that the SST25 is write enabled (WEL bit) and in AAI mode (AAI bit). This has been fixed by David Sidrane! config SST25_SLOWREAD bool default n endif config MTD_SST25XX bool "SPI-based SST25XX FLASH (64-MBit and larger)" default n select SPI ---help--- With the 64 MBit and larger parts, SST changed the write mechanism to support page write instead of byte/word write like the smaller parts. As a result, the SST25 driver is not compatible with the larger density parts, and the SST25XX driver must be used instead. if MTD_SST25XX config SST25XX_SPIMODE int "SST25 SPI Mode" default 0 config SST25XX_SPIFREQUENCY int "SST25 SPI Frequency" default 20000000 config SST25XX_MANUFACTURER hex "Manufacturers ID" default 0xBF ---help--- Various manufacturers may have produced the parts. 0xBF is the manufacturer ID for the parts manufactured by SST. config SST25XX_MEMORY_TYPE hex "Memory type ID" default 0x25 ---help--- The memory type for SST25VF065 series is 0x25, but this can be modified if needed to support compatible devices from different manufacturers. endif config MTD_SST39FV bool "SST39FV NOR FLASH" default n ---help--- Selects 16-bit SST NOR FLASH. This includes support for: SST39FV1601/SST39FV1602: 2Mb SST39FV3201/SST39FV3202: 4Mb if MTD_SST39FV config SST39VF_BASE_ADDRESS hex "SST39FV bass address" default 0x00000000 ---help--- This is the address where the SST29VF FLASH can be found in memory. endif config MTD_W25 bool "SPI-based W25 FLASH" default n select SPI if MTD_W25 config W25_SPIMODE int "W25 SPI Mode" default 0 config W25_SPIFREQUENCY int "W25 SPI Frequency" default 20000000 config W25_READONLY bool "W25 Read-Only FLASH" default n config W25_SECTOR512 bool "Simulate 512 byte Erase Blocks" default n config W25_SLOWREAD bool default n endif