712 lines
19 KiB
Plaintext
712 lines
19 KiB
Plaintext
#
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# For a description of the syntax of this configuration file,
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# see the file kconfig-language.txt in the NuttX tools repository.
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#
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comment "MTD Configuration"
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config MTD_PARTITION
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bool "Support MTD partitions"
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default n
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---help---
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MTD partitions are build as MTD drivers that manage a sub-region
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of the FLASH memory. The contain the original FLASH MTD driver and
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simply manage all accesses to assure that (1) FLASH accesses are
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always offset to the beginning of the partition, and (2) that FLASH
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accesses do not extend outside of the partition.
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A FLASH device may be broken up into several partitions managed,
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each managed by a separate MTD driver. The MTD parition interface
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is described in:
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include/nuttx/mtd/mtd.h
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FAR struct mtd_dev_s *mtd_partition(FAR struct mtd_dev_s *mtd, off_t offset, off_t nblocks);
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Each call to mtd_partition() will create a new MTD driver instance
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managing the sub-region of flash beginning at 'offset' (in blocks)
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and of size 'nblocks' on the device specified by 'mtd'.
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config FTL_WRITEBUFFER
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bool "Enable write buffering in the FTL layer"
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default n
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depends on DRVR_WRITEBUFFER
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config FTL_READAHEAD
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bool "Enable read-ahead buffering in the FTL layer"
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default n
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depends on DRVR_READAHEAD
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config MTD_SECT512
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bool "512B sector conversion"
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default n
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---help---
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If enabled, a MTD driver will be created that will convert the
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sector size of any other MTD driver to a 512 byte "apparent" sector
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size. The managed MTD driver in this case must have an erase block
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size that is greater than 512B and an event multiple of 512B.
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if MTD_SECT512
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config MTD_SECT512_ERASED_STATE
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hex "Erased state of the FLASH"
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default 0xff
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config MTD_SECT512_READONLY
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bool "512B read-only"
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default n
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endif # MTD_SECT512
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config MTD_PARTITION_NAMES
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bool "Support MTD partition naming"
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depends on FS_PROCFS
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depends on MTD_PARTITION
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default n
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---help---
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MTD partitions can be assigned a name for reporting via the procfs
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file system interface. This adds an API which must be called to
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specify the partition name.
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config MTD_BYTE_WRITE
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bool "Byte write"
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default n
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---help---
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Some devices (such as the EON EN25F80) support writing an arbitrary
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number of bytes to FLASH. This setting enables MTD interfaces to
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support such writes. The SMART file system can take advantage of
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this option if it is enabled.
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config MTD_WRBUFFER
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bool "Enable MTD write buffering"
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default n
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depends on DRVR_WRITEBUFFER
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select DRVR_INVALIDATE
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select DRVR_READBYTES
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---help---
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Build the mtd_rwbuffer layer and enable support for write buffering.
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if MTD_WRBUFFER
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config MTD_NWRBLOCKS
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int "MTD write buffer size"
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default 4
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---help---
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The size of the MTD write buffer (in blocks)
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endif # MTD_WRBUFFER
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config MTD_READAHEAD
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bool "Enable MTD read-ahead buffering"
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default n
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depends on DRVR_READAHEAD
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select DRVR_INVALIDATE
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select DRVR_READBYTES
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---help---
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Build the mtd_rwbuffer layer and enable support for read-ahead buffering.
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if MTD_READAHEAD
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config MTD_NRDBLOCKS
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int "MTD read-head buffer size"
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default 4
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---help---
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The size of the MTD read-ahead buffer (in blocks)
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endif # MTD_READAHEAD
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config MTD_CONFIG
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bool "Enable Dev Config (MTD based) device"
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default n
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---help---
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Provides a /dev/config device for saving / restoring application
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configuration data to a standard MTD device or partition.
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if MTD_CONFIG
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config MTD_CONFIG_RAM_CONSOLIDATE
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bool "Always use RAM consolidation method (work in progress)"
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default n
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---help---
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When the MTD device used for /dev/config contains more than one
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erase block, the "unused entry" consolidation reserves one erase
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block by default for cleanup purposes. This consumes the minimum
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amount of RAM, however it "wastes" one erase block on the device.
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(For configurations that have only a single erase block assigned
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to the config device, RAM consolidation is the ONLY option.)
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Another apporach is to allow the driver to use the entire MTD
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device (or partition) to save config data, and then allocate a
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RAM buffer (the size of one erase block) to perform the
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consolidation. Enabling this feature basically trades off RAM
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usage for FLASH usage. If the MTD device used for config data
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has small erase sizes (4K, etc.) and there is plenty of free RAM
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available, then this is probably a good option.
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Another benefit of this option is it reduces code space a bit
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since the "reserved block" consolidate routine is not needed.
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config MTD_CONFIG_ERASEDVALUE
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hex "Erased value of bytes on the MTD device"
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default 0xff
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---help---
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Specifies the value of the erased state of the MTD FLASH. For
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most FLASH parts, this is 0xff, but could also be zero depending
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on the device.
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endif # MTD_CONFIG
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comment "MTD Device Drivers"
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menuconfig MTD_NAND
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bool "MTD NAND support"
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default n
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---help---
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Enable support for NAND FLASH devices.
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if MTD_NAND
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config MTD_NAND_MAXNUMBLOCKS
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int "Max blocks"
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default 1024
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---help---
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Maximum number of blocks in a device
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config MTD_NAND_MAXNUMPAGESPERBLOCK
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int "Max pages per block"
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default 256
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---help---
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Maximum number of pages in one block
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config MTD_NAND_MAXPAGEDATASIZE
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int "Max page size"
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default 4096
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---help---
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Maximum size of the data area of one page, in bytes.
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config MTD_NAND_MAXPAGESPARESIZE
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int "Max size of spare area"
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default 256
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---help---
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Maximum size of the spare area of one page, in bytes.
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config MTD_NAND_MAXSPAREECCBYTES
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int "Max number of ECC bytes"
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default 48
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---help---
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Maximum number of ECC bytes stored in the spare for one single page.
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config MTD_NAND_BLOCKCHECK
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bool "Block check"
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default y
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---help---
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Enable support for ECC and bad block checking.
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config MTD_NAND_SWECC
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bool "Sofware ECC support"
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default n if ARCH_NAND_HWECC
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default y if !ARCH_NAND_HWECC
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---help---
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Build in logic to support software calculation of ECC.
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config MTD_NAND_HWECC
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bool "Hardware ECC support"
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default n
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depends on ARCH_NAND_HWECC
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---help---
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Build in logic to support hardware calculation of ECC.
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config MTD_NAND_MAXSPAREEXTRABYTES
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int "Max extra free bytes"
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default 206
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---help---
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Maximum number of extra free bytes inside the spare area of a page.
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config MTD_NAND_EMBEDDEDECC
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bool "Support devices with Embedded ECC"
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default n
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---help---
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Some NAND devices have internal, embedded ECC function. One (the
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only one supported) is Micron, 4-bit ECC, device size = 1Gb or 2Gb
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or 4Gb.
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endif # MTD_NAND
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config RAMMTD
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bool "RAM-based MTD driver"
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default n
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---help---
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Build support for a RAM-based MTD driver.
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if RAMMTD
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config RAMMTD_BLOCKSIZE
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int "RAM MTD block size"
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default 512
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config RAMMTD_ERASESIZE
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int "RAM MTD erase block size"
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default 4096
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config RAMMTD_ERASESTATE
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hex "Simulated erase state"
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default 0xff
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config RAMMTD_FLASHSIM
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bool "RAM MTD FLASH Simulation"
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default n
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---help---
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RAMMTD_FLASHSIM will add some extra logic to improve the level of
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FLASH simulation.
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endif
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config MTD_AT24XX
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bool "I2C-based AT24xx eeprom"
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default n
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select I2C
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---help---
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Build support for I2C-based AT24CXX EEPROM(at24c32, at24c64,
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at24c128, at24c256)
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if MTD_AT24XX
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config AT24XX_SIZE
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int "AT24xx size (Kbit)"
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default 64
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---help---
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This is the XX in the AT24Cxx part number. For example, if you have a
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AT 24C512, then the correct value is 512. This value is also the capacity
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of the part in kilobits. For example, the 24C512 supports 512 Kbits or
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512 /8 = 64 KiB.
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config AT24XX_ADDR
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hex "AT24XX I2C address"
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default 0x50
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range 0x50 0x57
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---help---
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The I2C address of the FLASH part. This is should be 0b01010aaa
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(where aaa is determined by board/pin configuration).
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For accesses to "extended memory" accesses, the driver will set
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bit 3 of this address using 0xb01011aaa as the I2C address.
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config AT24XX_EXTENDED
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bool "Extended memory"
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default n
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---help---
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If the device supports extended memory, then this operion may be set
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to enabled the MTDIOC_EXTENDED ioctl() operation. When the
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extended operation is selected, calls to the driver read method will
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return data from the extended memory region.
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config AT24XX_EXTSIZE
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int "Extended memory size (bytes)"
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default 0
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depends on AT24XX_EXTENDED
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---help---
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If the device supports extended memory, then this option provides
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the size of the memory in bytes.
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Other, block-oriented access are not effected by this setting
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endif
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config MTD_AT25
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bool "SPI-based AT25 FLASH"
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default n
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select SPI
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if MTD_AT25
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config AT25_SPIMODE
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int "AT25 SPI Mode"
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default 0
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config AT25_SPIFREQUENCY
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int "AT25 SPI Frequency"
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default 20000000
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endif
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config MTD_AT45DB
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bool "SPI-based AT45DB flash"
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default n
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select SPI
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if MTD_AT45DB
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config AT45DB_FREQUENCY
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int "AT45DB frequency"
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default 1000000
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config AT45DB_PREWAIT
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bool "Enable higher performance write logic"
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default y
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config AT45DB_PWRSAVE
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bool "Enable power save"
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default n
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endif
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config MTD_M25P
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bool "SPI-based M25P FLASH"
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default n
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select SPI
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if MTD_M25P
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config M25P_SPIMODE
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int "M25P SPI mode"
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default 0
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config M25P_MANUFACTURER
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hex "M25P manufacturers ID"
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default 0x20
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---help---
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Various manufacturers may have produced the parts. 0x20 is the manufacturer ID
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for the STMicro MP25x serial FLASH. If, for example, you are using the a Macronix
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International MX25 serial FLASH, the correct manufacturer ID would be 0xc2.
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config M25P_MEMORY_TYPE
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hex "M25P memory type ID"
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default 0x20
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---help---
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The memory type for M25 "P" series is 0x20, but the driver also supports "F" series
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devices, such as the EON EN25F80 part which adds a 4K sector erase capability. The
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memory type for "F" series parts from EON is 0x31. The 4K sector erase size will
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automatically be enabled when filesytems that can use it are enabled, such as SMART.
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config M25P_SUBSECTOR_ERASE
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bool "Sub-Sector Erase"
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default n
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---help---
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Some devices (such as the EON EN25F80) support a smaller erase block
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size (4K vs 64K). This option enables support for sub-sector erase.
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The SMART file system can take advantage of this option if it is enabled.
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endif
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config MTD_ST25FL1
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bool "QuadSPI-based ST25FL1 FLASH"
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default n
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select SPI
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if MTD_ST25FL1
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config ST25FL1_SPIMODE
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int "ST25FL1 SPI Mode"
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default 0
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config ST25FL1_SPIFREQUENCY
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int "ST25FL1 SPI Frequency"
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default 20000000
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config ST25FL1_SECTOR512
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bool "Simulate 512 byte Erase Blocks"
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default n
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endif
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config MTD_SMART
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bool "Sector Mapped Allocation for Really Tiny (SMART) Flash support"
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default n
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---help---
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The MP25x series of Flash devices are typically very small and have a very large
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erase block size. This causes issues with the standard Flash Translation Layer
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block driver since it tries to allocate a RAM block the size of a flash erase
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block, which is typically 64K. This block driver uses a different approach
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to sacrifice performance for RAM memory footprint by saving data in sectors
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(typically 2K - 4K based on memory size) and relocating sectors as needed when
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an erase block needs to be erased.
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if MTD_SMART
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config MTD_SMART_SECTOR_SIZE
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int "SMART Device sector size"
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default 1024
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---help---
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Sets the size of a single allocation on the SMART device. Larger sector sizes
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reduce overhead per sector, but cause more wasted space with a lot of smaller
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files.
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config MTD_SMART_WRITEBUFFER
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bool "Enable SMART write buffering"
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default n
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depends on DRVR_WRITEBUFFER
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config MTD_SMART_READAHEAD
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bool "Enable SMART read-ahead buffering"
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default n
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depends on DRVR_READAHEAD
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config MTD_SMART_WEAR_LEVEL
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bool "Support FLASH wear leveling"
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depends on MTD_SMART
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default y
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---help---
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Adds extra logic and RAM to guarantee equal wear leveling of the FLASH
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device by recording and monitoring erase block operations and selecting
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sector allocations to ensure all erase blocks are worn evenly. This will
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evenly wear both dynamic and static data on the device.
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if MTD_SMART_WEAR_LEVEL && !SMART_CRC_16
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config MTD_SMART_CONVERT_WEAR_FORMAT
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bool "Convert existing non wear leveling FLASH to wear leveling"
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default n
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---help---
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Adds a little extra code which detects an existing SMART format on a device
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that was created prior to the wear leveling implementation. This conversion
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only works if either no CRC is being used or if CRC-8 is being used as other
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CRC versions use a different header format and require a mksmartfs on the
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device even if an existing format is there.
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endif
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config MTD_SMART_ENABLE_CRC
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bool "Enable Sector CRC error detection"
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depends on MTD_SMART
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default n
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---help---
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Enables logic to compute and validate a CRC for logical sectors. The
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CRC is calculated for all bytes in the logical sector. The CRC size is
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selectable (8-bit, 16-bit, 32-bit). For added protection, larger CRCs should
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be used with larger (2K - 4K) sector sizes. Enabling CRC protection will
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cause increased sector relocation and increased erase block erasures since
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directory and wear-level status updates can no longer be performed in-place
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and mandate re-writing the information to a new sector.
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An 8-bit CRC protection scheme can be added to an existing non-CRC formatted
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SMART volume without needing to reformat the drive. As sectors are re-written
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or relocated, they will be converted to CRC protected sectors.
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choice
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prompt "CRC level selection"
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depends on MTD_SMART_ENABLE_CRC
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default SMART_CRC_8
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---help---
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Select the level of CRC protection implemented in the SMART MTD layer.
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Smaller CRC selection uses less overhead per logical sectors, but also has
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a higher probability of not detecting multiple bit errors. Devices with
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larger logical sector sizes should use a larger CRC.
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config SMART_CRC_8
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bool "CRC-8"
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config SMART_CRC_16
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bool "CRC-16"
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endchoice
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config MTD_SMART_MINIMIZE_RAM
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bool "Minimize SMART RAM usage using logical sector cache"
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depends on MTD_SMART
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default 0
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---help---
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Reduces RAM usage in the SMART MTD layer by replacing the 1-for-1 logical to
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physical sector map with a smaller cache-based structure. This can save a
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considerable amount of RAM on devices with a large sector count, but at the
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expense of increased read/write times when a cache miss occurs. If the
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requested logical sector has not been cached, then the device will need to be
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scanned to located it on the physical medium.
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config MTD_SMART_SECTOR_CACHE_SIZE
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int "Number of entries in the SMART logical sector cache"
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depends on MTD_SMART_MINIMIZE_RAM
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default 512
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---help---
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Sets the size of the cache used for logical to physical sector mapping. A
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larger number allows larger files to be "seek"ed randomly without encountering
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cache misses. Any files larger than CACH_SIZE * SECTOR_SIZE that are seeked
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start to end will cause the cache to flush forcing manual scanning of the
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MTD device to find the logical to physical mappings.
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config MTD_SMART_SECTOR_PACK_COUNTS
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bool "Pack free and release counts when possible"
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depends on MTD_SMART_MINIMIZE_RAM
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default y
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---help---
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For volumes with 16 sectors per erase block or less, this option causes the
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free sector and released sector counts used for allocation and garbage
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collection to be packed such that two values are stored per byte. For
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volumes with 16 sectors per erase block, the 4 LSBs are packed and all of
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the high-order bits are packed separately (8 per byte). This squeezes even
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more RAM out.
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config MTD_SMART_SECTOR_ERASE_DEBUG
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bool "Track Erase Block erasure counts"
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depends on MTD_SMART
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default n
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---help---
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Allocates an Erase Block erase count array and keeps track of the number
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of erases per erase block. This data is then presented on the procfs
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interface.
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config MTD_SMART_ALLOC_DEBUG
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bool "RAM Allocation Debug"
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depends on MTD_SMART
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default n
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---help---
|
|
Records all SMART MTD layer allocations for debug purposes and makes them
|
|
accessible from the ProcFS interface if it is enabled.
|
|
|
|
endif # MTD_SMART
|
|
|
|
config MTD_RAMTRON
|
|
bool "SPI-based RAMTRON NVRAM Devices FM25V10"
|
|
default n
|
|
select SPI
|
|
---help---
|
|
SPI-based RAMTRON NVRAM Devices FM25V10
|
|
|
|
if MTD_RAMTRON
|
|
|
|
config RAMTRON_WRITEWAIT
|
|
bool "Wait after write"
|
|
default n
|
|
---help---
|
|
Wait after performing a RAMTRON write operation to assure that the
|
|
write completed error-free. The default behavior is to wait for the
|
|
previous write to complete BEFORE starting the next write. This
|
|
option, if selected, forces the driver to wait for the write to
|
|
complete AFTER each write. This is a tradoeff: Selecting this
|
|
option will significantly reduce RAMTRON performance but has the
|
|
advantage that it will correctly associate a write failure with a
|
|
specific write operation.
|
|
|
|
One RAMTRON read operations, this option also enables some additional
|
|
status checking to check for device failures during the read.
|
|
|
|
config RAMTRON_SETSPEED
|
|
bool "Adjustable bus speed"
|
|
default n
|
|
---help---
|
|
Select an option to provide an ioctl, MTDIOC_SETSPEED call that
|
|
supports dynamic selection of the RAMTRON bus speed.
|
|
|
|
endif
|
|
|
|
config MTD_SST25
|
|
bool "SPI-based SST25 FLASH"
|
|
default n
|
|
select SPI
|
|
|
|
if MTD_SST25
|
|
|
|
config SST25_SPIMODE
|
|
int "SST25 SPI Mode"
|
|
default 0
|
|
|
|
config SST25_SPIFREQUENCY
|
|
int "SST25 SPI Frequency"
|
|
default 20000000
|
|
|
|
config SST25_READONLY
|
|
bool "SST25 Read-Only FLASH"
|
|
default n
|
|
|
|
config SST25_SECTOR512
|
|
bool "Simulate 512 byte Erase Blocks"
|
|
default n
|
|
|
|
config SST25_SLOWWRITE
|
|
bool
|
|
default n
|
|
---help---
|
|
There used to be a bug in the current code when using the higher speed AAI
|
|
write sequence. The nature of the bug is that the WRDI instruction is not
|
|
working. At the end of the AAI sequence, the status register continues to
|
|
report that the SST25 is write enabled (WEL bit) and in AAI mode (AAI
|
|
bit). This has been fixed by David Sidrane!
|
|
|
|
config SST25_SLOWREAD
|
|
bool
|
|
default n
|
|
|
|
endif
|
|
|
|
config MTD_SST25XX
|
|
bool "SPI-based SST25XX FLASH (64-MBit and larger)"
|
|
default n
|
|
select SPI
|
|
---help---
|
|
With the 64 MBit and larger parts, SST changed the write mechanism to
|
|
support page write instead of byte/word write like the smaller parts.
|
|
As a result, the SST25 driver is not compatible with the larger density
|
|
parts, and the SST25XX driver must be used instead.
|
|
|
|
if MTD_SST25XX
|
|
|
|
config SST25XX_SPIMODE
|
|
int "SST25 SPI Mode"
|
|
default 0
|
|
|
|
config SST25XX_SPIFREQUENCY
|
|
int "SST25 SPI Frequency"
|
|
default 20000000
|
|
|
|
config SST25XX_MANUFACTURER
|
|
hex "Manufacturers ID"
|
|
default 0xBF
|
|
---help---
|
|
Various manufacturers may have produced the parts. 0xBF is the manufacturer ID
|
|
for the parts manufactured by SST.
|
|
|
|
config SST25XX_MEMORY_TYPE
|
|
hex "Memory type ID"
|
|
default 0x25
|
|
---help---
|
|
The memory type for SST25VF065 series is 0x25, but this can be modified if needed
|
|
to support compatible devices from different manufacturers.
|
|
|
|
endif
|
|
|
|
config MTD_SST39FV
|
|
bool "SST39FV NOR FLASH"
|
|
default n
|
|
---help---
|
|
Selects 16-bit SST NOR FLASH. This includes support for:
|
|
|
|
SST39FV1601/SST39FV1602: 2Mb
|
|
SST39FV3201/SST39FV3202: 4Mb
|
|
|
|
if MTD_SST39FV
|
|
|
|
config SST39VF_BASE_ADDRESS
|
|
hex "SST39FV bass address"
|
|
default 0x00000000
|
|
---help---
|
|
This is the address where the SST29VF FLASH can be found in memory.
|
|
|
|
endif
|
|
|
|
config MTD_W25
|
|
bool "SPI-based W25 FLASH"
|
|
default n
|
|
select SPI
|
|
|
|
if MTD_W25
|
|
|
|
config W25_SPIMODE
|
|
int "W25 SPI Mode"
|
|
default 0
|
|
|
|
config W25_SPIFREQUENCY
|
|
int "W25 SPI Frequency"
|
|
default 20000000
|
|
|
|
config W25_READONLY
|
|
bool "W25 Read-Only FLASH"
|
|
default n
|
|
|
|
config W25_SECTOR512
|
|
bool "Simulate 512 byte Erase Blocks"
|
|
default n
|
|
|
|
config W25_SLOWREAD
|
|
bool
|
|
default n
|
|
|
|
endif
|